화학공학실험 MEMS

목차

1. Objective

2. Introduction & Background

(Introduction)

Background

1)MEMS(Micro-Electro-Mechanical Systems)

2) MEMS Fabrication Processing

3. Appartus & Reagents

4. Procedure

1) Cleaning Process

2) Lithography Process

3) Assembling process

본문내용

sed in sputter deposition.
Vapor phase etching is another dry etching method, which can be done with simpler equipment than what RIE requires. In this process the wafer to be etched is placed inside a chamber, in which one or more gases are introduced. The material to be etched is dissolved at the surface in a chemical reaction with the gas molecules. The two most common vapor phase etching technologies are silicon dioxide etching using hydrogen fluoride (HF) and silicon etching using xenon diflouride (XeF2), both of which are isotropic in nature. Usually, care must be taken in the design of a vapor phase process to not have bi-products form in the chemical reaction that condense on the surface and interfere with the etching process.
- When do I want to use dry etching?
The first thing you should note about this technology is that it is expensive to run compared to wet etching. If you are concerned with feature resolution in thin film structures or you need vertical sidewalls for deep etchings in the substrate, you have to consider dry etching. If you are concerned about the price of your process and device, you may want to minimize the use of dry etching. The IC industry has long since adopted dry etching to achieve small features, but in many cases feature size is not as critical in MEMS. Dry etching is an enabling technology, which comes at a sometimes high cost.
Figure 7: Typical parallel-plate reactive ion etching system.
3. Appartus & Reagents
1) Appratus : Spin coater, UV exposure, Tester coil, Heat palter, Glass
2) Reagents : DEVELOPER-AZ400K, PDMS(Polydimethylsiloxane), PR-AZ1512
4. Procedure
1) Cleaning Process
First, you immerse the glass in DeIonized Water(minimum 10minute). And then, you clean the glass in order of Acetone, IPA and DeIonized Water and purge with N2 gas. At this time, you must put the glass in petri-dish quickly after cleaning.
2) Lithography Process
After cleaning process, you have to do lithography process. Purpose of lithography is pattering on wafer. This is process of lithography. First, you dope PR(photoresist) on wafer(cleanin glass). In this step, you run following 3 steps of spin coating by using PR-AZ1512. You run spin coater in RPM 2000, 5sec, and RPM 1000, 40sec, and RPM 2000, 5sec. And then, you do soft baking process. Soft baking process is done on heat plate at 120℃, 90sec. In third step, you do photo process. Photo process is putting the mask(printing your name on transparent paper like OHP film to make mask) on the glass and exposure UV in vacuum condition for 300sec. After Photo process, you put the glass inside developer-AZ400K for development. This step is 'Develop process'. Finally, you do hard baking on heat plate at 120℃, 90sec.
3) Assembling process
First, you mix the PDMS with PDMS curing agent with a ratio of 10:1 and cast on developed glass. Second, you peel off the cured(crosslinked) PDMS from the glass. Finally, treat the surface of PDMS with tesler coil and put it on surface of glass.

키워드

화학공학실험,   화공실험,   mems,   photo,   micro electrial mechanical system