HEMT(High Electron Mobility Transistor)의 기본 원리

소개글

HEMT(High Electron Mobility Transistor)의 기본 원리에 대한 보고서 자료입니다.

목차

1. What’s HEMT?
2. 2DEG
3. Polarization
4. Contacts
5. Summary

본문내용

1. What’s HEMT?
- High electron mobility with heterojunction structure
(Prevent Coulomb scattering with no doping materials)
- High thermal stability
- High Breakdown voltage
2. 2DEG
- Discontinuity through the conduction band of the two semiconductors determines a charge transfer,
creating a triangular potential.
3. Polarization
- AlGaN/GaN HEMTs transistor don’t need doping to obtain a high electron density.
4. Contacts
- Source / Drain : Ohmic contact, Carrier could move free Metal ↔ Semiconductor.
- Gate : Schottky contact, controlled transistor to turn on / off.
5. Summary

키워드

HEMT,   GaN,   LED,   GaN on Si,   Electron,   Mobility,   Transistor