차세대 메모리 - 상변화 메모리(PRAM - Phase Change Memory)의 기술 개발 현황

소개글

차세대 메모리 - 상변화 메모리(PRAM - Phase Change Memory)의 기술 개발 현황에 대한 보고서 자료입니다.

목차

■ Abstract ..............................................page. 1

■ Introduction ..................................page. 1

■ Phase Change Memory ............................page. 1
1. About the Phase Change Memory ........................page. 1
1-1. Operation Theory of the Phase Change Memory .......page. 2

1-2. The most promising Memory - PRAM ..................page. 3
2. The features of the Phase Change Memory ..............page. 3
2-1. The advantages of the Phase Change Memory .........page. 4
2-2. The disadvantages of the Phase Change Memory ............page. 4
3. The Development of the Phase Change Memory ..........page. 5

■ Conclusions ..................................page.6

■ References .......................................page.7

▣ FIGURE CONTENTS ▣

< Figure 1. Set-reset principle of PRAM device based GST and Basic structure. >
< Figure 2. Electrical switching of PC materials for non-volatile electronic storage >
< Figure 3. Calculated electron densities in arbitrary units >
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▣ TABLE CONTENTS ▣

< Table 1. Feature of PRAM comparing other novel promising memories >-------▣

본문내용

Now a day, In Rewritable CD, DVDRAM, Rewritable DVD disks Ge-Sb-Te ( 3 elements) and Ag-In-Sb-Te ( 4 elements ) is used as Phase Change Materials.
< Figure 3. Calculated electron densities in arbitrary units >
Ge-Sb-Te ( 3 elements) is used in PD, DVD-RAM, DVD-RW. And Ag-In-Sb-Te( 4 elements ) is used in CD-RW, DVD-RW. Current technology makes CD-RW possible to write / rewrite almost 1,000time, in case of DVD-RAM almost 500,000 time.
In 2002 International Solid-State Circuits Conferences(ISSCC) Intel Corp., Ovonyx Corp., Azalea Corp, three companies reported PRAM device using GexSbyTez. That was first time of PRAM technology application. That chip name is Ovonic Unified Memory(OUM) ,made by 0.18㎛ CMOS process , and demonstrate possibility to combination PRAM with CMOS process
Ovonyx Corp. AFRL. BAE systems make by using radiation-hardened CMOS process PRAM device based Chalcogenide. Chalcogenide was composed 1Transistor-1Resistor system.
The phase change materials is the most important substance in optical memory. In CD-ROM, DVD, DVD-RAM many studies have been reported. Ge2Sb2Te5 is very well known for its high optical contrast in the state of amorphous and crystalline. However, the characteristics required in solid state memory are quite different from optical ones. The structural properties of GeSbTe thin films with composition is investigated for PRAM.
ETRI 및 연세대 등에서는 PRAM 소자 개발에 신규 재료인 안티몬(Sb)과 셀라늄(Se)이 혼합된 이원계 금속 합금인 Sb-Se 상변화 재료를 사용하여 GTS에 비해 재료의 녹는점이 낮고 결정화에 필요한 시간이

키워드

차세대 메모리 ,   상변화 메모리 ,   PRAM ,   Phase Change Memory ,   메모리재료,   메모리 기술개발 ,   SRAM,   FLASH